Preliminary Reliability Evaluation of Copper-Interconnect metallization Technology
نویسنده
چکیده
The advantages of using copper for interconnection in microcircuits are mostly due to its lower resistance compared to the aluminum metallization. Copper-based metallization has specific resistance of less than 2 μΩ-cm compared to more than 3 μΩ-cm for aluminum metallization. In combination with a reduced susceptibility to electromigration failures, this enables designing of highly scaled devices with significantly reduced time delays. These features are mostly beneficial for high-performance microprocessors and fast static RAMs (FSRAM).
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تاریخ انتشار 2000